[9484PC Stock]
- Nimewo Pati:
- IGP01N120H2XKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 1200V 3.2A 28W TO220-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IGP01N120H2XKSA1 electronic components. IGP01N120H2XKSA1 can be shipped within 24 hours after order. If you have any demands for IGP01N120H2XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IGP01N120H2XKSA1 Atribi pwodwi yo
Nimewo Pati :
IGP01N120H2XKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 1200V 3.2A 28W TO220-3
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
3.2A
Kouran - Pèseptè batman (Icm) :
3.5A
Vce (sou) (Max) @ Vge, Ic :
2.8V @ 15V, 1A
Pouvwa - Max :
28W
Oblije chanje enèji :
140µJ
Kalite Antre :
Standard
Gate chaje :
8.6nC
Td (on / off) @ 25 ° C :
13ns/370ns
Kondisyon egzamen an :
800V, 1A, 241 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-3
Pake Aparèy Founisè :
PG-TO220-3
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