[12680PC Stock]
- Nimewo Pati:
- IRF7521D1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 20V 2.4A MICRO-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF7521D1 electronic components. IRF7521D1 can be shipped within 24 hours after order. If you have any demands for IRF7521D1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7521D1 Atribi pwodwi yo
Nimewo Pati :
IRF7521D1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 20V 2.4A MICRO-8
Seri :
FETKY™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.7V, 4.5V
RD sou (Max) @ Id, Vgs :
135 mOhm @ 1.7A, 4.5V
Vgs (th) (Max) @ Id :
700mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
260pF @ 15V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
1.3W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Micro8™
Pake / Ka :
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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