[12657PC Stock]
- Nimewo Pati:
- IRLR3103TR
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 30V 55A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Diodes - RF, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRLR3103TR electronic components. IRLR3103TR can be shipped within 24 hours after order. If you have any demands for IRLR3103TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLR3103TR Atribi pwodwi yo
Nimewo Pati :
IRLR3103TR
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 30V 55A DPAK
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
55A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
19 mOhm @ 33A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
50nC @ 4.5V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
1600pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
107W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D-Pak
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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