[1191PC Stock]
- Nimewo Pati:
- SSM4K27CTTPL3
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 20V .5A CST4.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs, Diodes - RF, Transistors - Bipolè (BJT) - Arrays and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage SSM4K27CTTPL3 electronic components. SSM4K27CTTPL3 can be shipped within 24 hours after order. If you have any demands for SSM4K27CTTPL3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM4K27CTTPL3 Atribi pwodwi yo
Nimewo Pati :
SSM4K27CTTPL3
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 20V .5A CST4
Seri :
U-MOSIII
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
500mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4V
RD sou (Max) @ Id, Vgs :
205 mOhm @ 250mA, 4V
Vgs (th) (Max) @ Id :
1.1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
174pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
400mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
CST4 (1.2x0.8)
Pake / Ka :
4-SMD, No Lead
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