Vishay Semiconductor Diodes Division - UH2BHE3_A/I

KEY Part #: K6457232

UH2BHE3_A/I Pricing (USD) [406932PC Stock]

  • 1 pcs$0.09089
  • 6,400 pcs$0.08237

Nimewo Pati:
UH2BHE3_A/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 2A DO214AA. Rectifiers 2A,100V,25ns, SMB Planar FER RECT, SMD
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division UH2BHE3_A/I electronic components. UH2BHE3_A/I can be shipped within 24 hours after order. If you have any demands for UH2BHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UH2BHE3_A/I Atribi pwodwi yo

Nimewo Pati : UH2BHE3_A/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 2A DO214AA
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 2A
Voltage - Forward (Vf) (Max) @ Si : 1.05V @ 2A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 25ns
Kouran - Fèy Reverse @ Vr : 2µA @ 100V
Kapasite @ Vr, F : 42pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMB)
Operating Tanperati - Junction : -55°C ~ 175°C

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