Infineon Technologies - IPB65R125C7ATMA1

KEY Part #: K6401861

IPB65R125C7ATMA1 Pricing (USD) [2903PC Stock]

  • 1,000 pcs$1.17120

Nimewo Pati:
IPB65R125C7ATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH TO263-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs, Tiristors - SCR - Modil yo, Modil pouvwa chofè, Diodes - RF and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB65R125C7ATMA1 Atribi pwodwi yo

Nimewo Pati : IPB65R125C7ATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH TO263-3
Seri : CoolMOS™ C7
Estati Pati : Discontinued at Digi-Key
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 125 mOhm @ 8.9A, 10V
Vgs (th) (Max) @ Id : 4V @ 440µA
Chaje Gate (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1670pF @ 400V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 101W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D²PAK (TO-263AB)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB