IRFI1010NPBF Pricing (USD) [46297PC Stock]
- 1 pcs$0.81111
- 10 pcs$0.73084
- 100 pcs$0.58735
- 500 pcs$0.45683
- 1,000 pcs$0.37851
- Nimewo Pati:
- IRFI1010NPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 55V 49A TO220FP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Zener - Single, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Diodes - Zener - Arrays and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFI1010NPBF electronic components. IRFI1010NPBF can be shipped within 24 hours after order. If you have any demands for IRFI1010NPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFI1010NPBF Atribi pwodwi yo
Nimewo Pati :
IRFI1010NPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 55V 49A TO220FP
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
49A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
12 mOhm @ 26A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
130nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2900pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
58W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB Full-Pak
Pake / Ka :
TO-220-3 Full Pack
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