Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
DIODE GEN PURP 800V 2A DO214AA
Voltage - DC Ranvèse (Vr) (Max) :
800V
Kouran - Mwayèn Rèktifye (Io) :
2A
Voltage - Forward (Vf) (Max) @ Si :
1.15V @ 2A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
1.5µs
Kouran - Fèy Reverse @ Vr :
1µA @ 800V
Kapasite @ Vr, F :
30pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AA, SMB
Pake Aparèy Founisè :
DO-214AA (SMB)
Operating Tanperati - Junction :
-55°C ~ 150°C