Infineon Technologies - IPD50R3K0CEBTMA1

KEY Part #: K6400931

IPD50R3K0CEBTMA1 Pricing (USD) [3226PC Stock]

  • 2,500 pcs$0.06285

Nimewo Pati:
IPD50R3K0CEBTMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 500V 1.7A PG-TO-252.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Diodes - RF, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Modil pouvwa chofè and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPD50R3K0CEBTMA1 electronic components. IPD50R3K0CEBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD50R3K0CEBTMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD50R3K0CEBTMA1 Atribi pwodwi yo

Nimewo Pati : IPD50R3K0CEBTMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 500V 1.7A PG-TO-252
Seri : CoolMOS™ CE
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 13V
RD sou (Max) @ Id, Vgs : 3 Ohm @ 400mA, 13V
Vgs (th) (Max) @ Id : 3.5V @ 30µA
Chaje Gate (Qg) (Max) @ Vgs : 4.3nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 84pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 18W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TO252-3
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63