[3229PC Stock]
- Nimewo Pati:
- IXTY1R4N60P TRL
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 600V 1.4A D-PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXTY1R4N60P TRL electronic components. IXTY1R4N60P TRL can be shipped within 24 hours after order. If you have any demands for IXTY1R4N60P TRL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTY1R4N60P TRL Atribi pwodwi yo
Nimewo Pati :
IXTY1R4N60P TRL
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 600V 1.4A D-PAK
Seri :
Polar™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
9 Ohm @ 700mA, 10V
Vgs (th) (Max) @ Id :
5.5V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs :
5.2nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
140pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
50W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252, (D-Pak)
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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