Infineon Technologies - AIHD03N60RFATMA1

KEY Part #: K6422391

AIHD03N60RFATMA1 Pricing (USD) [156929PC Stock]

  • 1 pcs$0.23569
  • 2,500 pcs$0.20592

Nimewo Pati:
AIHD03N60RFATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IC DISCRETE 600V TO252-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AIHD03N60RFATMA1 Atribi pwodwi yo

Nimewo Pati : AIHD03N60RFATMA1
Manifakti : Infineon Technologies
Deskripsyon : IC DISCRETE 600V TO252-3
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 5A
Kouran - Pèseptè batman (Icm) : 7.5A
Vce (sou) (Max) @ Vge, Ic : 2.5V @ 15V, 2.5A
Pouvwa - Max : 53.6W
Oblije chanje enèji : 50µJ (on), 40µJ (off)
Kalite Antre : Standard
Gate chaje : 17.1nC
Td (on / off) @ 25 ° C : 10ns/128ns
Kondisyon egzamen an : 400V, 2.5A, 68 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : PG-TO252-3-313