Infineon Technologies - IKD10N60RATMA1

KEY Part #: K6422448

IKD10N60RATMA1 Pricing (USD) [121772PC Stock]

  • 1 pcs$0.30374
  • 2,500 pcs$0.28749
  • 5,000 pcs$0.28394

Nimewo Pati:
IKD10N60RATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 600V 20A TO252-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Infineon Technologies IKD10N60RATMA1 electronic components. IKD10N60RATMA1 can be shipped within 24 hours after order. If you have any demands for IKD10N60RATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IKD10N60RATMA1 Atribi pwodwi yo

Nimewo Pati : IKD10N60RATMA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT 600V 20A TO252-3
Seri : TrenchStop™
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 20A
Kouran - Pèseptè batman (Icm) : 30A
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 10A
Pouvwa - Max : 150W
Oblije chanje enèji : 210µJ (on), 380µJ (off)
Kalite Antre : Standard
Gate chaje : 64nC
Td (on / off) @ 25 ° C : 14ns/192ns
Kondisyon egzamen an : 400V, 10A, 23 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : PG-TO252-3