Nexperia USA Inc. - PMEG6010ESBYL

KEY Part #: K6432672

PMEG6010ESBYL Pricing (USD) [1665266PC Stock]

  • 1 pcs$0.02221
  • 10,000 pcs$0.02033

Nimewo Pati:
PMEG6010ESBYL
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
DIODE SCHOTTKY 60V 1A DSN1006-2. Schottky Diodes & Rectifiers PMEG6010ESB/DSN1006-2/REEL 7
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - RF, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PMEG6010ESBYL electronic components. PMEG6010ESBYL can be shipped within 24 hours after order. If you have any demands for PMEG6010ESBYL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMEG6010ESBYL Atribi pwodwi yo

Nimewo Pati : PMEG6010ESBYL
Manifakti : Nexperia USA Inc.
Deskripsyon : DIODE SCHOTTKY 60V 1A DSN1006-2
Seri : -
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 60V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 730mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2.4ns
Kouran - Fèy Reverse @ Vr : 30µA @ 60V
Kapasite @ Vr, F : 20pF @ 10V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : 2-XDFN
Pake Aparèy Founisè : DSN1006-2
Operating Tanperati - Junction : 150°C (Max)

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