[12691PC Stock]
- Nimewo Pati:
- IRFB23N20D
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 200V 24A TO-220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFB23N20D electronic components. IRFB23N20D can be shipped within 24 hours after order. If you have any demands for IRFB23N20D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB23N20D Atribi pwodwi yo
Nimewo Pati :
IRFB23N20D
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 200V 24A TO-220AB
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
24A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
100 mOhm @ 14A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
86nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1960pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.8W (Ta), 170W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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