Renesas Electronics America - RJK0346DPA-01#J0B

KEY Part #: K6404058

RJK0346DPA-01#J0B Pricing (USD) [2142PC Stock]

  • 2,500 pcs$0.32890

Nimewo Pati:
RJK0346DPA-01#J0B
Manifakti:
Renesas Electronics America
Detaye deskripsyon:
MOSFET N-CH 30V 65A WPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RJK0346DPA-01#J0B Atribi pwodwi yo

Nimewo Pati : RJK0346DPA-01#J0B
Manifakti : Renesas Electronics America
Deskripsyon : MOSFET N-CH 30V 65A WPAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 65A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 1.8 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 49nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 7650pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 65W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-WPAK
Pake / Ka : 8-PowerWDFN