STMicroelectronics - STGP10NB60SD

KEY Part #: K6424395

STGP10NB60SD Pricing (USD) [9323PC Stock]

  • 1 pcs$1.67466
  • 10 pcs$1.50323
  • 100 pcs$1.23167
  • 500 pcs$0.99474
  • 1,000 pcs$0.83894

Nimewo Pati:
STGP10NB60SD
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT 600V 29A 80W TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Modil pouvwa chofè, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGP10NB60SD electronic components. STGP10NB60SD can be shipped within 24 hours after order. If you have any demands for STGP10NB60SD, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGP10NB60SD Atribi pwodwi yo

Nimewo Pati : STGP10NB60SD
Manifakti : STMicroelectronics
Deskripsyon : IGBT 600V 29A 80W TO220
Seri : PowerMESH™
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 29A
Kouran - Pèseptè batman (Icm) : 80A
Vce (sou) (Max) @ Vge, Ic : 1.75V @ 15V, 10A
Pouvwa - Max : 80W
Oblije chanje enèji : 600µJ (on), 5mJ (off)
Kalite Antre : Standard
Gate chaje : 33nC
Td (on / off) @ 25 ° C : 700ns/1.2µs
Kondisyon egzamen an : 480V, 10A, 1 kOhm, 15V
Ranvèse Tan Reverse (trr) : 37ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AB