STGP10NB60SD Pricing (USD) [9323PC Stock]
- 1 pcs$1.67466
- 10 pcs$1.50323
- 100 pcs$1.23167
- 500 pcs$0.99474
- 1,000 pcs$0.83894
- Nimewo Pati:
- STGP10NB60SD
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- IGBT 600V 29A 80W TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Diodes - RF, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STGP10NB60SD electronic components. STGP10NB60SD can be shipped within 24 hours after order. If you have any demands for STGP10NB60SD, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGP10NB60SD Atribi pwodwi yo
Nimewo Pati :
STGP10NB60SD
Manifakti :
STMicroelectronics
Deskripsyon :
IGBT 600V 29A 80W TO220
Seri :
PowerMESH™
Estati Pati :
Active
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
29A
Kouran - Pèseptè batman (Icm) :
80A
Vce (sou) (Max) @ Vge, Ic :
1.75V @ 15V, 10A
Pouvwa - Max :
80W
Oblije chanje enèji :
600µJ (on), 5mJ (off)
Kalite Antre :
Standard
Gate chaje :
33nC
Td (on / off) @ 25 ° C :
700ns/1.2µs
Kondisyon egzamen an :
480V, 10A, 1 kOhm, 15V
Ranvèse Tan Reverse (trr) :
37ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-3
Pake Aparèy Founisè :
TO-220AB
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