IXTH04N300P3HV Pricing (USD) [5059PC Stock]
- 1 pcs$9.41889
- 10 pcs$8.56178
- 100 pcs$6.92252
- Nimewo Pati:
- IXTH04N300P3HV
- Manifakti:
- IXYS
- Detaye deskripsyon:
- 2000V TO 3000V POLAR3 POWER MOSF.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Diodes - Zener - Arrays and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in IXYS IXTH04N300P3HV electronic components. IXTH04N300P3HV can be shipped within 24 hours after order. If you have any demands for IXTH04N300P3HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH04N300P3HV Atribi pwodwi yo
Nimewo Pati :
IXTH04N300P3HV
Manifakti :
IXYS
Deskripsyon :
2000V TO 3000V POLAR3 POWER MOSF
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
3000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
400mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
190 Ohm @ 200mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
283pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
104W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247HV
Pake / Ka :
TO-247-3 Variant
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