Toshiba Semiconductor and Storage - TK100A06N1,S4X

KEY Part #: K6397722

TK100A06N1,S4X Pricing (USD) [34131PC Stock]

  • 1 pcs$1.32651
  • 50 pcs$1.01640
  • 100 pcs$0.91476
  • 500 pcs$0.71148
  • 1,000 pcs$0.58951

Nimewo Pati:
TK100A06N1,S4X
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 60V 100A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Diodes - RF, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK100A06N1,S4X electronic components. TK100A06N1,S4X can be shipped within 24 hours after order. If you have any demands for TK100A06N1,S4X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK100A06N1,S4X Atribi pwodwi yo

Nimewo Pati : TK100A06N1,S4X
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 60V 100A TO-220
Seri : U-MOSVIII-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.7 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 140nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 10500pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 45W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220SIS
Pake / Ka : TO-220-3 Full Pack

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