STMicroelectronics - STGP30M65DF2

KEY Part #: K6422353

STGP30M65DF2 Pricing (USD) [36388PC Stock]

  • 1 pcs$1.01180
  • 10 pcs$0.90728
  • 100 pcs$0.72938
  • 500 pcs$0.59925
  • 1,000 pcs$0.49651

Nimewo Pati:
STGP30M65DF2
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT 650V 30A TO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Tiristors - SCR, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - RF ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGP30M65DF2 electronic components. STGP30M65DF2 can be shipped within 24 hours after order. If you have any demands for STGP30M65DF2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGP30M65DF2 Atribi pwodwi yo

Nimewo Pati : STGP30M65DF2
Manifakti : STMicroelectronics
Deskripsyon : IGBT 650V 30A TO-220AB
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 60A
Kouran - Pèseptè batman (Icm) : 120A
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 30A
Pouvwa - Max : 258W
Oblije chanje enèji : 300µJ (on), 960µJ (off)
Kalite Antre : Standard
Gate chaje : 80nC
Td (on / off) @ 25 ° C : 31.6ns/115ns
Kondisyon egzamen an : 400V, 30A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 140ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220