Vishay Semiconductor Diodes Division - VS-GT50TP120N

KEY Part #: K6533285

VS-GT50TP120N Pricing (USD) [1278PC Stock]

  • 1 pcs$33.87746
  • 24 pcs$32.26421

Nimewo Pati:
VS-GT50TP120N
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
IGBT 1200V 100A 405W INT-A-PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-GT50TP120N electronic components. VS-GT50TP120N can be shipped within 24 hours after order. If you have any demands for VS-GT50TP120N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GT50TP120N Atribi pwodwi yo

Nimewo Pati : VS-GT50TP120N
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : IGBT 1200V 100A 405W INT-A-PAK
Seri : -
Estati Pati : Active
Kalite IGBT : Trench
Nou konte genyen : Half Bridge
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 100A
Pouvwa - Max : 405W
Vce (sou) (Max) @ Vge, Ic : 2.35V @ 15V, 50A
Kouran - Cutoff Pèseptè (Max) : 5mA
Antre kapasite (Cies) @ Vce : 6.24nF @ 30V
Antre : Standard
NTC thermistor : No
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : INT-A-PAK (3 + 4)
Pake Aparèy Founisè : INT-A-PAK

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