Nimewo Pati :
VS-GT50TP120N
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
IGBT 1200V 100A 405W INT-A-PAK
Nou konte genyen :
Half Bridge
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
100A
Vce (sou) (Max) @ Vge, Ic :
2.35V @ 15V, 50A
Kouran - Cutoff Pèseptè (Max) :
5mA
Antre kapasite (Cies) @ Vce :
6.24nF @ 30V
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
INT-A-PAK (3 + 4)
Pake Aparèy Founisè :
INT-A-PAK