Diodes Incorporated - DMTH6010SK3-13

KEY Part #: K6394280

DMTH6010SK3-13 Pricing (USD) [167961PC Stock]

  • 1 pcs$0.22021
  • 2,500 pcs$0.19490

Nimewo Pati:
DMTH6010SK3-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 60V 16.3A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMTH6010SK3-13 electronic components. DMTH6010SK3-13 can be shipped within 24 hours after order. If you have any demands for DMTH6010SK3-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMTH6010SK3-13 Atribi pwodwi yo

Nimewo Pati : DMTH6010SK3-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 60V 16.3A
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16.3A (Ta), 70A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 8 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 36.3nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1940pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.1W (Ta)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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