Nimewo Pati :
1N4448_T50R
Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 100V 200MA DO35
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
200mA
Voltage - Forward (Vf) (Max) @ Si :
1V @ 100mA
Vitès :
Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) :
4ns
Kouran - Fèy Reverse @ Vr :
5µA @ 75V
Kapasite @ Vr, F :
2pF @ 0V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-204AH, DO-35, Axial
Pake Aparèy Founisè :
DO-35
Operating Tanperati - Junction :
-65°C ~ 175°C