AS3BGHM3_A/I Pricing (USD) [519274PC Stock]
- 1 pcs$0.07123
- Nimewo Pati:
- AS3BGHM3_A/I
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE AVALANCHE 400V 3A DO214AA. Rectifiers 3A, 400V, SMB, Aval AEC-Q101 Qualified
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Diodes - RF, Transistors - IGBTs - Modil yo, Tiristors - SCR, Transistors - FETs, MOSFETs - Single and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division AS3BGHM3_A/I electronic components. AS3BGHM3_A/I can be shipped within 24 hours after order. If you have any demands for AS3BGHM3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
AS3BGHM3_A/I Atribi pwodwi yo
Nimewo Pati :
AS3BGHM3_A/I
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE AVALANCHE 400V 3A DO214AA
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Avalanche
Voltage - DC Ranvèse (Vr) (Max) :
400V
Kouran - Mwayèn Rèktifye (Io) :
3A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.05V @ 3A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
20µA @ 600V
Kapasite @ Vr, F :
40pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AA, SMB
Pake Aparèy Founisè :
DO-214AA (SMB)
Operating Tanperati - Junction :
-55°C ~ 175°C
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