Manifakti :
Rohm Semiconductor
Deskripsyon :
DIODE SCHOTTKY 650V 8A TO220FM
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
650V
Kouran - Mwayèn Rèktifye (Io) :
8A
Voltage - Forward (Vf) (Max) @ Si :
1.55V @ 8A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
160µA @ 600V
Kapasite @ Vr, F :
291pF @ 1V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-2 Full Pack
Pake Aparèy Founisè :
TO-220FM
Operating Tanperati - Junction :
175°C (Max)