Vishay Semiconductor Diodes Division - V12P10HE3/86A

KEY Part #: K6448682

[999PC Stock]


    Nimewo Pati:
    V12P10HE3/86A
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE SCHOTTKY 100V 12A TO277A.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
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    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division V12P10HE3/86A electronic components. V12P10HE3/86A can be shipped within 24 hours after order. If you have any demands for V12P10HE3/86A, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    V12P10HE3/86A Atribi pwodwi yo

    Nimewo Pati : V12P10HE3/86A
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE SCHOTTKY 100V 12A TO277A
    Seri : eSMP®, TMBS®
    Estati Pati : Obsolete
    Kalite dyòd : Schottky
    Voltage - DC Ranvèse (Vr) (Max) : 100V
    Kouran - Mwayèn Rèktifye (Io) : 12A
    Voltage - Forward (Vf) (Max) @ Si : 700mV @ 12A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : -
    Kouran - Fèy Reverse @ Vr : 250µA @ 100V
    Kapasite @ Vr, F : -
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-277, 3-PowerDFN
    Pake Aparèy Founisè : TO-277A (SMPC)
    Operating Tanperati - Junction : -40°C ~ 150°C