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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APTM120U10DAG

Microsemi Corporation - APTM120U10DAG

KEY Part #: K6408119

[8593PC Stock]

    Nimewo Pati:
    APTM120U10DAG
    Manifakti:
    Microsemi Corporation
    Detaye deskripsyon:
    MOSFET N-CH 1200V 116A SP6.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Transistors - JFETs, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - FETs, MOSFETs - Single ...
    Avantaj konpetitif:
    We specialize in Microsemi Corporation APTM120U10DAG electronic components. APTM120U10DAG can be shipped within 24 hours after order. If you have any demands for APTM120U10DAG, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    APTM120U10DAG Atribi pwodwi yo

    Nimewo Pati : APTM120U10DAG
    Manifakti : Microsemi Corporation
    Deskripsyon : MOSFET N-CH 1200V 116A SP6
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 1200V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 160A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 120 mOhm @ 58A, 10V
    Vgs (th) (Max) @ Id : 5V @ 20mA
    Chaje Gate (Qg) (Max) @ Vgs : 1100nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 28900pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 3290W (Tc)
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Chassis Mount
    Pake Aparèy Founisè : SP6
    Pake / Ka : SP6

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