Infineon Technologies - IRLR4343TRPBF

KEY Part #: K6408024

[771PC Stock]


    Nimewo Pati:
    IRLR4343TRPBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 55V 26A DPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRLR4343TRPBF electronic components. IRLR4343TRPBF can be shipped within 24 hours after order. If you have any demands for IRLR4343TRPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRLR4343TRPBF Atribi pwodwi yo

    Nimewo Pati : IRLR4343TRPBF
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 55V 26A DPAK
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 55V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 26A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 50 mOhm @ 4.7A, 10V
    Vgs (th) (Max) @ Id : 1V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 42nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 740pF @ 50V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 79W (Tc)
    Operating Tanperati : -40°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D-Pak
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63