Toshiba Semiconductor and Storage - BAS516,L3F

KEY Part #: K6458642

BAS516,L3F Pricing (USD) [3388457PC Stock]

  • 1 pcs$0.01092

Nimewo Pati:
BAS516,L3F
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
DIODE GEN PURP 100V 250MA ESC. Diodes - General Purpose, Power, Switching Switching Diode 100V .35pF .25A
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - RF, Transistors - Bipolè (BJT) - Single, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage BAS516,L3F electronic components. BAS516,L3F can be shipped within 24 hours after order. If you have any demands for BAS516,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS516,L3F Atribi pwodwi yo

Nimewo Pati : BAS516,L3F
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : DIODE GEN PURP 100V 250MA ESC
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 250mA
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 150mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 3ns
Kouran - Fèy Reverse @ Vr : 200nA @ 80V
Kapasite @ Vr, F : 0.35pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SC-79, SOD-523
Pake Aparèy Founisè : ESC
Operating Tanperati - Junction : 150°C (Max)

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