[1192PC Stock]
- Nimewo Pati:
- BSC200P03LSGAUMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH 30V 12.5A TDSON-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - RF and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSC200P03LSGAUMA1 electronic components. BSC200P03LSGAUMA1 can be shipped within 24 hours after order. If you have any demands for BSC200P03LSGAUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC200P03LSGAUMA1 Atribi pwodwi yo
Nimewo Pati :
BSC200P03LSGAUMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 30V 12.5A TDSON-8
Seri :
OptiMOS™
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.9A (Ta), 12.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
20 mOhm @ 12.5A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
48.5nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
2430pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.5W (Ta), 63W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TDSON-8
Pake / Ka :
8-PowerTDFN
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