GeneSiC Semiconductor - 1N8035-GA

KEY Part #: K6444970

1N8035-GA Pricing (USD) [2267PC Stock]

  • 1 pcs$100.48412
  • 10 pcs$95.63344
  • 25 pcs$92.16875

Nimewo Pati:
1N8035-GA
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
DIODE SCHOTTKY 650V 14.6A TO276.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor 1N8035-GA electronic components. 1N8035-GA can be shipped within 24 hours after order. If you have any demands for 1N8035-GA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N8035-GA Atribi pwodwi yo

Nimewo Pati : 1N8035-GA
Manifakti : GeneSiC Semiconductor
Deskripsyon : DIODE SCHOTTKY 650V 14.6A TO276
Seri : -
Estati Pati : Obsolete
Kalite dyòd : Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) : 650V
Kouran - Mwayèn Rèktifye (Io) : 14.6A (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.5V @ 15A
Vitès : No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) : 0ns
Kouran - Fèy Reverse @ Vr : 5µA @ 650V
Kapasite @ Vr, F : 1107pF @ 1V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-276AA
Pake Aparèy Founisè : TO-276
Operating Tanperati - Junction : -55°C ~ 250°C
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