[1128PC Stock]
- Nimewo Pati:
- IXUC100N055
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 55V 100A ISOPLUS-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in IXYS IXUC100N055 electronic components. IXUC100N055 can be shipped within 24 hours after order. If you have any demands for IXUC100N055, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXUC100N055 Atribi pwodwi yo
Nimewo Pati :
IXUC100N055
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 55V 100A ISOPLUS-220
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
7.7 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
100nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOPLUS220™
Pake / Ka :
ISOPLUS220™
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