NTBV5605T4G Pricing (USD) [7983PC Stock]
- 800 pcs$0.30426
- Nimewo Pati:
- NTBV5605T4G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 60V 18.5A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Diodes - Rèkteur - Arrays and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NTBV5605T4G electronic components. NTBV5605T4G can be shipped within 24 hours after order. If you have any demands for NTBV5605T4G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTBV5605T4G Atribi pwodwi yo
Nimewo Pati :
NTBV5605T4G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 60V 18.5A D2PAK
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
18.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V
RD sou (Max) @ Id, Vgs :
140 mOhm @ 8.5A, 5V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
22nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1190pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
88W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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