IXFN230N20T Pricing (USD) [3437PC Stock]
- 1 pcs$13.23185
- 10 pcs$12.23946
- 25 pcs$11.24707
- 100 pcs$10.45316
- 250 pcs$9.59309
- 500 pcs$9.12998
- Nimewo Pati:
- IXFN230N20T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 200V 220A SOT-227.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - RF and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in IXYS IXFN230N20T electronic components. IXFN230N20T can be shipped within 24 hours after order. If you have any demands for IXFN230N20T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN230N20T Atribi pwodwi yo
Nimewo Pati :
IXFN230N20T
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 200V 220A SOT-227
Seri :
GigaMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
220A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
7.5 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
378nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
28000pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1090W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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