Nimewo Pati :
TK10Q60W,S1VQ
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 600V 9.7A IPAK
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
430 mOhm @ 4.9A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs :
20nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
700pF @ 300V
Disipasyon Pouvwa (Max) :
80W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I-PAK
Pake / Ka :
TO-251-3 Stub Leads, IPak