[1520PC Stock]
- Nimewo Pati:
- PMF290XN,115
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 20V 1A SOT323.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PMF290XN,115 electronic components. PMF290XN,115 can be shipped within 24 hours after order. If you have any demands for PMF290XN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMF290XN,115 Atribi pwodwi yo
Nimewo Pati :
PMF290XN,115
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 20V 1A SOT323
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
350 mOhm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.72nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
34pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
560mW (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-323-3
Pake / Ka :
SC-70, SOT-323
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