Vishay Semiconductor Diodes Division - BAS19-G3-08

KEY Part #: K6458591

BAS19-G3-08 Pricing (USD) [2806764PC Stock]

  • 1 pcs$0.01391
  • 15,000 pcs$0.01384

Nimewo Pati:
BAS19-G3-08
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 200MA SOT23. Diodes - General Purpose, Power, Switching 120 Volt 200mA 50ns 2.5A IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs, Diodes - RF, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BAS19-G3-08 electronic components. BAS19-G3-08 can be shipped within 24 hours after order. If you have any demands for BAS19-G3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS19-G3-08 Atribi pwodwi yo

Nimewo Pati : BAS19-G3-08
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 200MA SOT23
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 200mA
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 200mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 100nA @ 100V
Kapasite @ Vr, F : 5pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè : SOT-23
Operating Tanperati - Junction : -55°C ~ 150°C

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