Vishay Semiconductor Diodes Division - EGP31G-E3/D

KEY Part #: K6440210

EGP31G-E3/D Pricing (USD) [247410PC Stock]

  • 1 pcs$0.14950

Nimewo Pati:
EGP31G-E3/D
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 400V 3A DO201AD. Rectifiers 3A,400V,50NS
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division EGP31G-E3/D electronic components. EGP31G-E3/D can be shipped within 24 hours after order. If you have any demands for EGP31G-E3/D, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGP31G-E3/D Atribi pwodwi yo

Nimewo Pati : EGP31G-E3/D
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 400V 3A DO201AD
Seri : SUPERECTIFIER®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 400V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 4µA @ 400V
Kapasite @ Vr, F : 48pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : DO-201AD, Axial
Pake Aparèy Founisè : DO-201AD
Operating Tanperati - Junction : -65°C ~ 175°C

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