Vishay Semiconductor Diodes Division - 1N4151W-G3-08

KEY Part #: K6439909

1N4151W-G3-08 Pricing (USD) [2423462PC Stock]

  • 1 pcs$0.01611
  • 15,000 pcs$0.01603

Nimewo Pati:
1N4151W-G3-08
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 50V 150MA SOD123. Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division 1N4151W-G3-08 electronic components. 1N4151W-G3-08 can be shipped within 24 hours after order. If you have any demands for 1N4151W-G3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4151W-G3-08 Atribi pwodwi yo

Nimewo Pati : 1N4151W-G3-08
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 50V 150MA SOD123
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 50V
Kouran - Mwayèn Rèktifye (Io) : 150mA
Voltage - Forward (Vf) (Max) @ Si : 1V @ 50mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : 4ns
Kouran - Fèy Reverse @ Vr : 50nA @ 50V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : SOD-123
Pake Aparèy Founisè : SOD-123
Operating Tanperati - Junction : -55°C ~ 150°C

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