IGB30N60H3ATMA1 Pricing (USD) [63182PC Stock]
- 1 pcs$0.61885
- 1,000 pcs$0.60638
- 2,000 pcs$0.56456
- Nimewo Pati:
- IGB30N60H3ATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 600V 60A 187W TO263-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IGB30N60H3ATMA1 electronic components. IGB30N60H3ATMA1 can be shipped within 24 hours after order. If you have any demands for IGB30N60H3ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IGB30N60H3ATMA1 Atribi pwodwi yo
Nimewo Pati :
IGB30N60H3ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 600V 60A 187W TO263-3
Seri :
TrenchStop®
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
60A
Kouran - Pèseptè batman (Icm) :
120A
Vce (sou) (Max) @ Vge, Ic :
2.4V @ 15V, 30A
Pouvwa - Max :
187W
Oblije chanje enèji :
1.17mJ
Kalite Antre :
Standard
Gate chaje :
165nC
Td (on / off) @ 25 ° C :
18ns/207ns
Kondisyon egzamen an :
400V, 30A, 10.5 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
PG-TO263-3
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