Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 60V 3.5A 8-SOIC
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.5A
RD sou (Max) @ Id, Vgs :
100 mOhm @ 3.5A, 10V
Chaje Gate (Qg) (Max) @ Vgs :
30nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
435pF @ 25V
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOP