[3736PC Stock]
- Nimewo Pati:
- IRF5852TR
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 2.7A 6-TSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF5852TR electronic components. IRF5852TR can be shipped within 24 hours after order. If you have any demands for IRF5852TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF5852TR Atribi pwodwi yo
Nimewo Pati :
IRF5852TR
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 20V 2.7A 6-TSOP
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.7A
RD sou (Max) @ Id, Vgs :
90 mOhm @ 2.7A, 4.5V
Vgs (th) (Max) @ Id :
1.25V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
400pF @ 15V
Pouvwa - Max :
960mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
6-TSOP
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