ON Semiconductor - HGTG11N120CN

KEY Part #: K6424329

[8034PC Stock]


    Nimewo Pati:
    HGTG11N120CN
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    IGBT 1200V 43A 298W TO247.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè and Diodes - Bridge rèktifikateur ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor HGTG11N120CN electronic components. HGTG11N120CN can be shipped within 24 hours after order. If you have any demands for HGTG11N120CN, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    HGTG11N120CN Atribi pwodwi yo

    Nimewo Pati : HGTG11N120CN
    Manifakti : ON Semiconductor
    Deskripsyon : IGBT 1200V 43A 298W TO247
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : NPT
    Voltage - Pèseptè ki emèt deba (Max) : 1200V
    Kouran - Pèseptè (Ic) (Max) : 43A
    Kouran - Pèseptè batman (Icm) : 80A
    Vce (sou) (Max) @ Vge, Ic : 2.4V @ 15V, 11A
    Pouvwa - Max : 298W
    Oblije chanje enèji : 400µJ (on), 1.3mJ (off)
    Kalite Antre : Standard
    Gate chaje : 100nC
    Td (on / off) @ 25 ° C : 23ns/180ns
    Kondisyon egzamen an : 960V, 11A, 10 Ohm, 15V
    Ranvèse Tan Reverse (trr) : -
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake / Ka : TO-247-3
    Pake Aparèy Founisè : TO-247