Vishay Siliconix - SI1473DH-T1-E3

KEY Part #: K6408692

SI1473DH-T1-E3 Pricing (USD) [539PC Stock]

  • 3,000 pcs$0.10093

Nimewo Pati:
SI1473DH-T1-E3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET P-CH 30V 2.7A SC70-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - Zener - Single and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI1473DH-T1-E3 electronic components. SI1473DH-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI1473DH-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI1473DH-T1-E3 Atribi pwodwi yo

Nimewo Pati : SI1473DH-T1-E3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET P-CH 30V 2.7A SC70-6
Seri : TrenchFET®
Estati Pati : Obsolete
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 100 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 6.2nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 365pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.5W (Ta), 2.78W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SC-70-6 (SOT-363)
Pake / Ka : 6-TSSOP, SC-88, SOT-363