Nimewo Pati :
IGB01N120H2ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 1200V 3.2A 28W TO263-3-2
Estati Pati :
Not For New Designs
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
3.2A
Kouran - Pèseptè batman (Icm) :
3.5A
Vce (sou) (Max) @ Vge, Ic :
2.8V @ 15V, 1A
Oblije chanje enèji :
140µJ
Td (on / off) @ 25 ° C :
13ns/370ns
Kondisyon egzamen an :
800V, 1A, 241 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
PG-TO263-3-2