SISS23DN-T1-GE3 Pricing (USD) [252282PC Stock]
- 1 pcs$0.14661
- 3,000 pcs$0.13796
- Nimewo Pati:
- SISS23DN-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CH 20V 50A PPAK 1212-8S.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - IGBTs - Single, Transistors - JFETs, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SISS23DN-T1-GE3 electronic components. SISS23DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS23DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISS23DN-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SISS23DN-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 20V 50A PPAK 1212-8S
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
4.5 mOhm @ 20A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
300nC @ 10V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
8840pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
4.8W (Ta), 57W (Tc)
Operating Tanperati :
-50°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® 1212-8S (3.3x3.3)
Pake / Ka :
8-PowerVDFN
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