Toshiba Semiconductor and Storage - TK2P60D(TE16L1,NQ)

KEY Part #: K6420691

TK2P60D(TE16L1,NQ) Pricing (USD) [232755PC Stock]

  • 1 pcs$0.17568
  • 2,000 pcs$0.17480

Nimewo Pati:
TK2P60D(TE16L1,NQ)
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 600V 2A PW-MOLD.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK2P60D(TE16L1,NQ) electronic components. TK2P60D(TE16L1,NQ) can be shipped within 24 hours after order. If you have any demands for TK2P60D(TE16L1,NQ), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK2P60D(TE16L1,NQ) Atribi pwodwi yo

Nimewo Pati : TK2P60D(TE16L1,NQ)
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 600V 2A PW-MOLD
Seri : π-MOSVII
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 4.3 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id : 4.4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 280pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 60W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PW-MOLD
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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