Vishay Semiconductor Diodes Division - RGP10ME-E3/91

KEY Part #: K6443502

RGP10ME-E3/91 Pricing (USD) [2770PC Stock]

  • 12,500 pcs$0.06352

Nimewo Pati:
RGP10ME-E3/91
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 1KV 1A DO204AL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division RGP10ME-E3/91 electronic components. RGP10ME-E3/91 can be shipped within 24 hours after order. If you have any demands for RGP10ME-E3/91, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGP10ME-E3/91 Atribi pwodwi yo

Nimewo Pati : RGP10ME-E3/91
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 1KV 1A DO204AL
Seri : Automotive, AEC-Q101, Superectifier®
Estati Pati : Obsolete
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1000V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 150ns
Kouran - Fèy Reverse @ Vr : 5µA @ 1000V
Kapasite @ Vr, F : 15pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : DO-204AL, DO-41, Axial
Pake Aparèy Founisè : DO-204AL (DO-41)
Operating Tanperati - Junction : -65°C ~ 175°C

Ou ka enterese tou
  • UD0506T-TL-HX

    ON Semiconductor

    DIODE GEN PURP 600V 5A TPFA. Diodes - General Purpose, Power, Switching FRD 5A 600V LOW VF

  • RD0504T-P-TL-H

    ON Semiconductor

    DIODE GEN PURP 400V 5A TPFA.

  • SCS212AJTLL

    Rohm Semiconductor

    DIODE SCHOTTKY 650V 12A TO263AB. Schottky Diodes & Rectifiers SiC, SBD 650V 12A DPAK

  • SCS210AJHRTLL

    Rohm Semiconductor

    DIODE SCHOTTKY 650V 10A TO263AB. Schottky Diodes & Rectifiers 650V 10A SiC SBD AEC-Q101 Qualified

  • VS-8EWF02S-M3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 8A TO252AA. Diodes - General Purpose, Power, Switching New Input Diodes - D-PAK-e3

  • V10150S-E3/4W

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 150V 10A TO220AB.