IXYS - IXTH16P60P

KEY Part #: K6398308

IXTH16P60P Pricing (USD) [10530PC Stock]

  • 1 pcs$4.49955
  • 10 pcs$4.04827
  • 100 pcs$3.32843
  • 500 pcs$2.78870

Nimewo Pati:
IXTH16P60P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET P-CH 600V 16A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in IXYS IXTH16P60P electronic components. IXTH16P60P can be shipped within 24 hours after order. If you have any demands for IXTH16P60P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTH16P60P Atribi pwodwi yo

Nimewo Pati : IXTH16P60P
Manifakti : IXYS
Deskripsyon : MOSFET P-CH 600V 16A TO-247
Seri : PolarP™
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 720 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 92nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5120pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 460W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247 (IXTH)
Pake / Ka : TO-247-3