Vishay Semiconductor Diodes Division - BYG20JHE3_A/H

KEY Part #: K6439623

BYG20JHE3_A/H Pricing (USD) [610930PC Stock]

  • 1 pcs$0.06054
  • 7,200 pcs$0.05536

Nimewo Pati:
BYG20JHE3_A/H
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 600V 1.5A DO214. Rectifiers 1.5A,600V,75nS AVAL AEC-Q101 Qualified
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYG20JHE3_A/H electronic components. BYG20JHE3_A/H can be shipped within 24 hours after order. If you have any demands for BYG20JHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG20JHE3_A/H Atribi pwodwi yo

Nimewo Pati : BYG20JHE3_A/H
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 600V 1.5A DO214
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 1.5A
Voltage - Forward (Vf) (Max) @ Si : 1.4V @ 1.5A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 75ns
Kouran - Fèy Reverse @ Vr : 1µA @ 600V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AC, SMA
Pake Aparèy Founisè : DO-214AC (SMA)
Operating Tanperati - Junction : -55°C ~ 150°C

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