RCD100N19TL Pricing (USD) [202426PC Stock]
- 1 pcs$0.20200
- 2,500 pcs$0.20099
- Nimewo Pati:
- RCD100N19TL
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 190V 10A CPT3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RCD100N19TL electronic components. RCD100N19TL can be shipped within 24 hours after order. If you have any demands for RCD100N19TL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RCD100N19TL Atribi pwodwi yo
Nimewo Pati :
RCD100N19TL
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 190V 10A CPT3
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
190V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
182 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
52nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2000pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
850mW (Ta), 20W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
CPT3
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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